EG 8х8х0,3 mm

510.00

Single Crystal Electronic (ELSC) grade is highest purity HPHT diamond material with respect to point defects, with the lowest N and NV centre density of our commercially available materials. This material contains less than <50 ppb Nitrogen concentration and typically has less than 0.03 ppb NV concentration.

Crystallographic Orientation (Miscut): +/-3°

Crystallography: Typically 100% single sector {100}

Edges: Laser Cut

Edge Features: < 0.2 mm

Laser Kerf: <5°

Edge Orientation: <110> edges

Face Orientation: {100} faces

Side 1, Roughness, Ra: polished, Ra < 5 nm on {100) face

Side 2, Roughness, Ra: polished, Ra < 5 nm on {100) face

Charge Collection Efficiency (CCE): Typically >95%

Charge Collection Distance (CCD): Typically >475µm, @0.5 V µm-1 applied field, for 500 µm plate

Lateral Tolerance: +0.2/-0 mm

Thickness Tolerance: +/- 0.05 mm

Boron Concentration [B]: <50 ppb

Nitrogen Concentration [N]: <50 ppb